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Nano-electronics Systems & Materials Research Team
(NeoSMaRT)
Older Publications
CAFM based spectroscopy of stress-induced defects in HfO 2 with experimental evidence of the clustering model and metastable vacancy defect state
2
Ranjan, Alok; Raghavan, Nagarajan; Shubhakar, Kalya; Thamankar, Ramesh; Molina, Joel; O'Shea, Sean J; Bosman, Michael; Pey, Kin-Leong;
2016 IEEE International Reliability Physics Symposium (IRPS), 7A-4-1-7A-4-7 (2016)
IEEE
Localized Random Telegraphic Noise Study in HfO 2 dielectric stacks using Scanning Tunneling Microscopy—Analysis of process and stress-induced traps
5
ernst, A; Meyerheim, HL; Thamankar, R; Ostanin, S; Soyka, E; Mertig, I; Maznichenko, I;
2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, 458-462 (2015)
IEEE
Nanoscale physical analysis of localized breakdown events in HfO 2/SiO X dielectric stacks: A correlation study of STM induced BD with C-AFM and TEM
6
Shubhakar, K; Pey, KL; Bosman, M; Thamankar, R; Kushvaha, SS; Loke, YC; Wang, ZR; Raghavan, N; Wu, X; O'Shea, SJ;
2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, 1-7 (2012)
IEEE